{"created":"2023-05-15T14:56:20.812973+00:00","id":76534,"links":{},"metadata":{"_buckets":{"deposit":"578c6cc7-e72e-47c8-bb34-563868cb5e4a"},"_deposit":{"created_by":1,"id":"76534","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76534"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076534","sets":["1"]},"author_link":["778195","778194","778196","778192","778198","778201","778191","778193","778199","778200","778197"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-08","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageEnd":"081007-7","bibliographicPageStart":"081007-1","bibliographicVolumeNumber":"58","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"4H-SiC n-channel metal oxide semiconductor field effect transistors (NMOSFETs) with a Ba-silicate interface layer were irradiated with gamma-rays up to 850 kGy at room temperature. Above 600 kGy, the field effect mobility increased from 12 to 18 cm2 V−1 s−1. The narrower channel in the\nNMOSFETs enhanced radiation responses, such as mobility enhancement and threshold voltage shift. These results indicate that the edge of the channel significantly modifies the electrical characteristics.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.7567/1347-4065/ab2dab","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://iopscience.iop.org/article/10.7567/1347-4065/ab2dab","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0021-4922","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Muraok, Kosuke"}],"nameIdentifiers":[{"nameIdentifier":"778191","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sezak, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"778192","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ishikawa, Seiji"}],"nameIdentifiers":[{"nameIdentifier":"778193","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Maeda, Tomonori"}],"nameIdentifiers":[{"nameIdentifier":"778194","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"778195","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"778196","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"778197","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shin-Ichiro Kuroki"}],"nameIdentifiers":[{"nameIdentifier":"778198","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"778199","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"778200","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"778201","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-08-21"},"publish_date":"2019-08-21","publish_status":"0","recid":"76534","relation_version_is_last":true,"title":["Gamma-ray irradiation-induced mobility enhancement of 4H-SiC NMOSFETs with a Ba-silicate interface layer"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:18:31.947700+00:00"}