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Creation of nitrogen-vacancy centers in SiC by ion irradiation
https://repo.qst.go.jp/records/76311
https://repo.qst.go.jp/records/763116cd303d7-26f0-4c20-82f7-2755e6397777
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-07-20 | |||||
| タイトル | ||||||
| タイトル | Creation of nitrogen-vacancy centers in SiC by ion irradiation | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ohshima, Takeshi
× Ohshima, Takeshi× Sato, Shinichiro× Narahara, Takuma× Yamazaki, Yuichi× Abe, Yuta× Umeda, Takehide× Hijikata, Yasuto× Ohshima, Takeshi× Sato, Shinichiro× Yamazaki, Yuichi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Color centers which act as stable single photon emitters (SPEs) in wide bandgap semiconductors are key elements for quantum technologies. Silicon carbide (SiC) is regarded as a promising host material for qubit/quantum sensor. It was reported that negatively charged nitrogen-vacancy (NcVsi-) center in SiC (S=1) act as SPS with its zero phonon line (ZPL) around 1170 ~1250 nm. However, detailed characteristics of NcVsi- center in SiC have not yet been clarified since the creation methods for NcVsi- have not yet been established. In this study, various energetic charged particles such as protons, nitrogen (N), silicon (Si) and iodine (I) ions were irradiated into n-type and high purity semi-insulation (HPSI) hexagonal (4H) SiC and subsequently annealed up to 1100C. The creation of NcVsi in SiC are evaluated on the basis of photoluminescence (PL) characteristics. |
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| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 30th International Conference on Defects in Smiconductors (ICDS-30) | |||||
| 発表年月日 | ||||||
| 日付 | 2019-07-22 | |||||
| 日付タイプ | Issued | |||||
