{"created":"2023-05-15T14:56:11.293014+00:00","id":76311,"links":{},"metadata":{"_buckets":{"deposit":"20bed734-5834-4922-95c5-16ff9848535c"},"_deposit":{"created_by":1,"id":"76311","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76311"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076311","sets":["10:29"]},"author_link":["801865","801866","801871","801869","801867","801863","801870","801862","801864","801868"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-07-22","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Color centers which act as stable single photon emitters (SPEs) in wide bandgap semiconductors are key elements for quantum technologies. Silicon carbide (SiC) is regarded as a promising host material for qubit/quantum sensor. It was reported that negatively charged nitrogen-vacancy (NcVsi-) center in SiC (S=1) act as SPS with its zero phonon line (ZPL) around 1170 ~1250 nm. However, detailed characteristics of NcVsi- center in SiC have not yet been clarified since the creation methods for NcVsi- have not yet been established.\nIn this study, various energetic charged particles such as protons, nitrogen (N), silicon (Si) and iodine (I) ions were irradiated into n-type and high purity semi-insulation (HPSI) hexagonal (4H) SiC and subsequently annealed up to 1100C. The creation of NcVsi in SiC are evaluated on the basis of photoluminescence (PL) characteristics. ","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"30th International Conference on Defects in Smiconductors (ICDS-30) ","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"801862","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro"}],"nameIdentifiers":[{"nameIdentifier":"801863","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Narahara, Takuma"}],"nameIdentifiers":[{"nameIdentifier":"801864","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi"}],"nameIdentifiers":[{"nameIdentifier":"801865","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Abe, Yuta"}],"nameIdentifiers":[{"nameIdentifier":"801866","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Umeda, Takehide"}],"nameIdentifiers":[{"nameIdentifier":"801867","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hijikata, Yasuto"}],"nameIdentifiers":[{"nameIdentifier":"801868","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"801869","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"801870","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamazaki, Yuichi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"801871","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Creation of nitrogen-vacancy centers in SiC by ion irradiation","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Creation of nitrogen-vacancy centers in SiC by ion irradiation"}]},"item_type_id":"10005","owner":"1","path":["29"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-07-20"},"publish_date":"2019-07-20","publish_status":"0","recid":"76311","relation_version_is_last":true,"title":["Creation of nitrogen-vacancy centers in SiC by ion irradiation"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:45:40.075617+00:00"}