@misc{oai:repo.qst.go.jp:00076311,
 author = {Ohshima, Takeshi and Sato, Shinichiro and Narahara, Takuma and Yamazaki, Yuichi and Abe, Yuta and Umeda, Takehide and Hijikata, Yasuto and Ohshima, Takeshi and Sato, Shinichiro and Yamazaki, Yuichi},
 month = {Jul},
 note = {Color centers which act as stable single photon emitters (SPEs) in wide bandgap semiconductors are key elements for quantum technologies. Silicon carbide (SiC) is regarded as a promising host material for qubit/quantum sensor. It was reported that negatively charged nitrogen-vacancy (NcVsi-) center in SiC (S=1) act as SPS with its zero phonon line (ZPL) around 1170 ~1250 nm. However, detailed characteristics of NcVsi- center in SiC have not yet been clarified since the creation methods for NcVsi- have not yet been established.
In this study, various energetic charged particles such as protons, nitrogen (N), silicon (Si) and iodine (I) ions were irradiated into n-type and high purity semi-insulation (HPSI) hexagonal (4H) SiC and subsequently annealed up to 1100C. The creation of NcVsi in SiC are evaluated on the basis of photoluminescence (PL) characteristics., 30th International Conference on Defects in Smiconductors (ICDS-30)},
 title = {Creation of nitrogen-vacancy centers in SiC by ion irradiation},
 year = {2019}
}