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Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions
https://repo.qst.go.jp/records/76112
https://repo.qst.go.jp/records/76112091d0a70-67d2-4e07-9e59-c4c545503aa6
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-06-27 | |||||
| タイトル | ||||||
| タイトル | Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
U. Khan, Muhammad
× U. Khan, Muhammad× Chen, Daniel× Jafari, Saman× Ohshima, Takeshi× Abe, Hiroshi× Hameiri, Ziv× Mun Chong, Chee× Abbott, Malcolm× Ohshima, Takeshi× Abe, Hiroshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high temperature processing. Then, they can form recombination active defects.In previous studies, it was reported that they are regarded as a possible candidate for LeTID. However, there have been relatively few studies in the solar field dedicated to investigating vacancies, their recombination properties or their interaction with hydrogen. In this study, high energy electron radiation was used to create large numbers of vacancies in silicon, and the lifetime response to subsequent thermal processes in the presence or absence of bulk hydrogen was investigated.Modelling of injection dependent minority carrier lifetime finds that the defects formed via this radiation process have different Shockley-Read-Hall properties to LeTID and are as such, unlikely to be related. Furthermore, this defect can be removed during low temperature annealing if hydrogen exist in the bulk of the silicon wafers. This is in contrast to samples with no bulk hydrogen which do not recover during low temperature annealing. The study thus finds no evidence for any link between LeTID and vacancies in silicon, but it does demonstrate the ability of hydrogen to repair radiation damage. |
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| 書誌情報 |
Solar Energy Materials and Solar Cells 巻 200, p. 109990-1-109990-8, 発行日 2019-06 |
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| 出版者 | ||||||
| 出版者 | ELSEVIER | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0927-0248 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1016/j.solmat.2019.109990 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.sciencedirect.com/science/article/pii/S0927024819303198 | |||||
