{"created":"2023-05-15T14:56:02.694729+00:00","id":76112,"links":{},"metadata":{"_buckets":{"deposit":"6327dfcc-c30e-47cb-b469-f05499d5ebf6"},"_deposit":{"created_by":1,"id":"76112","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"76112"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00076112","sets":["1"]},"author_link":["772611","772616","772617","772612","772619","772615","772618","772613","772614","772620"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2019-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"109990-8","bibliographicPageStart":"109990-1","bibliographicVolumeNumber":"200","bibliographic_titles":[{"bibliographic_title":"Solar Energy Materials and Solar Cells"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high temperature processing. Then, they can form recombination active defects.In previous studies, it was reported that they are regarded as a possible candidate for LeTID. However, there have been relatively few studies in the solar field dedicated to investigating vacancies, their\nrecombination properties or their interaction with hydrogen. In this study, high energy electron radiation was used to create large numbers of vacancies in silicon, and the lifetime response to subsequent thermal processes in the presence or absence of bulk hydrogen was investigated.Modelling of injection dependent minority carrier lifetime finds that the defects formed via this radiation process have different Shockley-Read-Hall properties to LeTID and are as such, unlikely to be related. Furthermore, this defect can be removed during low temperature annealing if hydrogen exist in the bulk of the silicon wafers. This is in contrast to samples with no bulk hydrogen which do not recover during low temperature annealing. The study thus finds no evidence for any link between LeTID and vacancies in silicon, but it does demonstrate the ability of hydrogen to repair radiation damage.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"ELSEVIER"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1016/j.solmat.2019.109990","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.sciencedirect.com/science/article/pii/S0927024819303198","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"0927-0248","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"U. Khan, Muhammad"}],"nameIdentifiers":[{"nameIdentifier":"772611","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Chen, Daniel"}],"nameIdentifiers":[{"nameIdentifier":"772612","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Jafari, Saman"}],"nameIdentifiers":[{"nameIdentifier":"772613","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"772614","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Abe, Hiroshi"}],"nameIdentifiers":[{"nameIdentifier":"772615","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hameiri, Ziv"}],"nameIdentifiers":[{"nameIdentifier":"772616","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Mun Chong, Chee"}],"nameIdentifiers":[{"nameIdentifier":"772617","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Abbott, Malcolm"}],"nameIdentifiers":[{"nameIdentifier":"772618","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"772619","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Abe, Hiroshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"772620","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-06-27"},"publish_date":"2019-06-27","publish_status":"0","recid":"76112","relation_version_is_last":true,"title":["Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:26:28.090646+00:00"}