@article{oai:repo.qst.go.jp:00076112,
 author = {U. Khan, Muhammad and Chen, Daniel and Jafari, Saman and Ohshima, Takeshi and Abe, Hiroshi and Hameiri, Ziv and Mun Chong, Chee and Abbott, Malcolm and Ohshima, Takeshi and Abe, Hiroshi},
 journal = {Solar Energy Materials and Solar Cells},
 month = {Jun},
 note = {Silicon lattice vacancies exist in all silicon wafers and they increase in concentration due to high temperature processing. Then, they can form recombination active defects.In previous studies, it was reported that they are regarded as a possible candidate for LeTID. However, there have been relatively few studies in the solar field dedicated to investigating vacancies, their
recombination properties or their interaction with hydrogen. In this study, high energy electron radiation was used to create large numbers of vacancies in silicon, and the lifetime response to subsequent thermal processes in the presence or absence of bulk hydrogen was investigated.Modelling of injection dependent minority carrier lifetime finds that the defects formed via this radiation process have different Shockley-Read-Hall properties to LeTID and are as such, unlikely to be related. Furthermore, this defect can be removed during low temperature annealing if hydrogen exist in the bulk of the silicon wafers. This is in contrast to samples with no bulk hydrogen which do not recover during low temperature annealing. The study thus finds no evidence for any link between LeTID and vacancies in silicon, but it does demonstrate the ability of hydrogen to repair radiation damage.},
 pages = {109990-1--109990-8},
 title = {Degradation and regeneration of radiation-induced defects in silicon: A study of vacancy-hydrogen interactions},
 volume = {200},
 year = {2019}
}