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In situ synchrotron X-ray reciprocal space mapping during InGaN/GaN heterostructure nanowire growth
https://repo.qst.go.jp/records/75881
https://repo.qst.go.jp/records/7588182c5407e-8539-40f2-9142-dfd864d40685
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-05-23 | |||||
| タイトル | ||||||
| タイトル | In situ synchrotron X-ray reciprocal space mapping during InGaN/GaN heterostructure nanowire growth | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
上杉, 智洋
× 上杉, 智洋× 佐々木, 拓生× 杉谷, 寛弥× 高橋, 正光× Uesugi, Tomohiro× Sasaki, Takuo× Sugitani, Kanya× Takahashi, Masamitsu |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In situ synchrotron X-ray reciprocal space mapping was carried out to investigate the evolution of lattice strain and crystal structure of InGaN/GaN heterostructure nanowires grown by molecular beam epitaxy. At the beginning of the growth, the InGaN lattice was compressively strained to that of GaN, resulting in the pseudomorphic growth. This strain started to relax at a thickness of 3 nm and fully relaxed at 9 nm. Concomitantly, polytypes consisting of the zinc-blende and wurtzite phases were formed in InGaN. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | Compound Semiconductor Week 2019 | |||||
| 発表年月日 | ||||||
| 日付 | 2019-05-20 | |||||
| 日付タイプ | Issued | |||||
