@misc{oai:repo.qst.go.jp:00075881,
 author = {上杉, 智洋 and 佐々木, 拓生 and 杉谷, 寛弥 and 高橋, 正光 and Uesugi, Tomohiro and Sasaki, Takuo and Sugitani, Kanya and Takahashi, Masamitsu},
 month = {May},
 note = {In situ synchrotron X-ray reciprocal space mapping was carried out to investigate the evolution of lattice strain and crystal structure of InGaN/GaN heterostructure nanowires grown by molecular beam epitaxy. At the beginning of the growth, the InGaN lattice was compressively strained to that of GaN, resulting in the pseudomorphic growth. This strain started to relax at a thickness of 3 nm and fully relaxed at 9 nm. Concomitantly, polytypes consisting of the zinc-blende and wurtzite phases were formed in InGaN., Compound Semiconductor Week 2019},
 title = {In situ synchrotron X-ray reciprocal space mapping  during InGaN/GaN heterostructure nanowire growth},
 year = {2019}
}