{"created":"2023-05-15T14:55:52.840762+00:00","id":75881,"links":{},"metadata":{"_buckets":{"deposit":"96de9b7d-cdb1-4ea5-9ff5-b91737c8bd1c"},"_deposit":{"created_by":1,"id":"75881","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"75881"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00075881","sets":["10:28"]},"author_link":["850972","850970","850971","850973","850975","850976","850974","850969"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2019-05-20","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In situ synchrotron X-ray reciprocal space mapping was carried out to investigate the evolution of lattice strain and crystal structure of InGaN/GaN heterostructure nanowires grown by molecular beam epitaxy. At the beginning of the growth, the InGaN lattice was compressively strained to that of GaN, resulting in the pseudomorphic growth. This strain started to relax at a thickness of 3 nm and fully relaxed at 9 nm. Concomitantly, polytypes consisting of the zinc-blende and wurtzite phases were formed in InGaN.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"Compound Semiconductor Week 2019","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"上杉, 智洋"}],"nameIdentifiers":[{"nameIdentifier":"850969","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"850970","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"杉谷, 寛弥"}],"nameIdentifiers":[{"nameIdentifier":"850971","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"850972","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Uesugi, Tomohiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850973","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Takuo","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850974","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugitani, Kanya","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850975","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takahashi, Masamitsu","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"850976","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"In situ synchrotron X-ray reciprocal space mapping  during InGaN/GaN heterostructure nanowire growth","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"In situ synchrotron X-ray reciprocal space mapping  during InGaN/GaN heterostructure nanowire growth"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-05-23"},"publish_date":"2019-05-23","publish_status":"0","recid":"75881","relation_version_is_last":true,"title":["In situ synchrotron X-ray reciprocal space mapping  during InGaN/GaN heterostructure nanowire growth"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:27:01.486588+00:00"}