WEKO3
アイテム
Toward Realization of Ga2O3 Transistors for Power Electronics Applications
https://repo.qst.go.jp/records/73331
https://repo.qst.go.jp/records/73331e8f60c28-b2d0-402f-85ea-899ce70c61e0
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-21 | |||||
| タイトル | ||||||
| タイトル | Toward Realization of Ga2O3 Transistors for Power Electronics Applications | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Hoi, Wong Man
× Hoi, Wong Man× Nakata, Yoshiaki× Lin, Chia-Hung× Sasaki, Kohei× Morikawa, Yoji× Goto, Ken× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi× Kuramata, Akito× Yamakoshi, Shigenobu× Murakami, Hisashi× Kumagai, Yoshinao× Higashiwaki, Masataka× 武山 昭憲× 牧野 高紘× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-the-art Ga2O3 MOSFETs were realized on unintentionally-doped (UID) β-Ga2O3 (010) epilayers by employing Si-ion implantation doping for the channel and ohmic contacts. Field-plated depletion-mode devices delivered a high off-state breakdown voltage of 755 V, a large drain current on/off ratio of over 109, stable high temperature operation at 300°C, and dispersion-free pulsed output characteristics. Bulk Ga2O3 exhibited high gamma-ray tolerance, while radiation-induced dielectric damage and interface charge trapping limited the overall radiation hardness of these devices. Accumulation-mode normally-off operation was realized by gating a UID β-Ga2O3 (010) channel with low background carrier density. The design and operation of vertical Ga2O3 MOSFETs engineered with a current aperture will also be presented. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 14th International Conference on Modern Materials and Technologies | |||||
| 発表年月日 | ||||||
| 日付 | 2018-06-14 | |||||
| 日付タイプ | Issued | |||||
