{"created":"2023-05-15T14:53:51.222125+00:00","id":73331,"links":{},"metadata":{"_buckets":{"deposit":"cd300377-f7d8-4ceb-b948-8932539c3377"},"_deposit":{"created_by":1,"id":"73331","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73331"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073331","sets":["10:27"]},"author_link":["722514","722517","722507","722512","722515","722516","722504","722503","722508","722505","722509","722506","722513","722511","722501","722510","722502"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-06-14","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-the-art Ga2O3 MOSFETs were realized on unintentionally-doped (UID) β-Ga2O3 (010) epilayers by employing Si-ion implantation doping for the channel and ohmic contacts. Field-plated depletion-mode devices delivered a high off-state breakdown voltage of 755 V, a large drain current on/off ratio of over 109, stable high temperature operation at 300°C, and dispersion-free pulsed output characteristics. Bulk Ga2O3 exhibited high gamma-ray tolerance, while radiation-induced dielectric damage and interface charge trapping limited the overall radiation hardness of these devices. Accumulation-mode normally-off operation was realized by gating a UID β-Ga2O3 (010) channel with low background carrier density. The design and operation of vertical Ga2O3 MOSFETs engineered with a current aperture will also be presented.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"14th International Conference on Modern Materials and Technologies","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hoi, Wong Man"}],"nameIdentifiers":[{"nameIdentifier":"722501","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakata, Yoshiaki"}],"nameIdentifiers":[{"nameIdentifier":"722502","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Lin, Chia-Hung"}],"nameIdentifiers":[{"nameIdentifier":"722503","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Kohei"}],"nameIdentifiers":[{"nameIdentifier":"722504","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Morikawa, Yoji"}],"nameIdentifiers":[{"nameIdentifier":"722505","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Ken"}],"nameIdentifiers":[{"nameIdentifier":"722506","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"722507","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"722508","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"722509","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuramata, Akito"}],"nameIdentifiers":[{"nameIdentifier":"722510","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamakoshi, Shigenobu"}],"nameIdentifiers":[{"nameIdentifier":"722511","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murakami, Hisashi"}],"nameIdentifiers":[{"nameIdentifier":"722512","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumagai, Yoshinao"}],"nameIdentifiers":[{"nameIdentifier":"722513","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Higashiwaki, Masataka"}],"nameIdentifiers":[{"nameIdentifier":"722514","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722515","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722516","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722517","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Toward Realization of Ga2O3 Transistors for Power Electronics Applications","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Toward Realization of Ga2O3 Transistors for Power Electronics Applications"}]},"item_type_id":"10005","owner":"1","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-08-21"},"publish_date":"2018-08-21","publish_status":"0","recid":"73331","relation_version_is_last":true,"title":["Toward Realization of Ga2O3 Transistors for Power Electronics Applications"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:30:29.810646+00:00"}