@misc{oai:repo.qst.go.jp:00073331,
 author = {Hoi, Wong Man and Nakata, Yoshiaki and Lin, Chia-Hung and Sasaki, Kohei and Morikawa, Yoji and Goto, Ken and Takeyama, Akinori and Makino, Takahiro and Ohshima, Takeshi and Kuramata, Akito and Yamakoshi, Shigenobu and Murakami, Hisashi and Kumagai, Yoshinao and Higashiwaki, Masataka and 武山 昭憲 and 牧野 高紘 and 大島 武},
 month = {Jun},
 note = {β-Ga2O3 is being actively pursued for power switching and harsh environment electronics. State-of-the-art Ga2O3 MOSFETs were realized on unintentionally-doped (UID) β-Ga2O3 (010) epilayers by employing Si-ion implantation doping for the channel and ohmic contacts. Field-plated depletion-mode devices delivered a high off-state breakdown voltage of 755 V, a large drain current on/off ratio of over 109, stable high temperature operation at 300°C, and dispersion-free pulsed output characteristics. Bulk Ga2O3 exhibited high gamma-ray tolerance, while radiation-induced dielectric damage and interface charge trapping limited the overall radiation hardness of these devices. Accumulation-mode normally-off operation was realized by gating a UID β-Ga2O3 (010) channel with low background carrier density. The design and operation of vertical Ga2O3 MOSFETs engineered with a current aperture will also be presented., 14th International Conference on Modern Materials and Technologies},
 title = {Toward Realization of Ga2O3 Transistors for Power Electronics Applications},
 year = {2018}
}