WEKO3
アイテム
Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs
https://repo.qst.go.jp/records/73330
https://repo.qst.go.jp/records/73330d69f351a-d370-4c54-91a7-d191510f4f93
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-21 | |||||
| タイトル | ||||||
| タイトル | Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Hoi, Wong Man
× Hoi, Wong Man× Nakata, Yoshiaki× Lin, Chia-Hung× Sasaki, Kohei× Morikawa, Yoji× Goto, Ken× Takeyama, Akinori× Makino, Takahiro× Ohshima, Takeshi× Kuramata, Akito× Yamakoshi, Shigenobu× Murakami, Hisashi× Kumagai, Yoshinao× Higashiwaki, Masataka× 武山 昭憲× 牧野 高紘× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap (4.5–4.9 eV) semiconductor for high power and high voltage electronics with potential applications in harsh environments. Since the first report of a Ga2O3 field-effect transistor (FET) in 2012, Ga2O3 power devices have undergone tremendous technological advancement. This talk reviews the progress we have made and the lessons we have learnt on both lateral and vertical Ga2O3 metal-oxide-semiconductor (MOS) FETs. Future development directions will also be discussed. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 20th Workshop on Dielectrics in Microelectronics | |||||
| 発表年月日 | ||||||
| 日付 | 2018-06-12 | |||||
| 日付タイプ | Issued | |||||
