@misc{oai:repo.qst.go.jp:00073330,
 author = {Hoi, Wong Man and Nakata, Yoshiaki and Lin, Chia-Hung and Sasaki, Kohei and Morikawa, Yoji and Goto, Ken and Takeyama, Akinori and Makino, Takahiro and Ohshima, Takeshi and Kuramata, Akito and Yamakoshi, Shigenobu and Murakami, Hisashi and Kumagai, Yoshinao and Higashiwaki, Masataka and 武山 昭憲 and 牧野 高紘 and 大島 武},
 month = {Jun},
 note = {Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap (4.5–4.9 eV) semiconductor for high power and high voltage electronics with potential applications in harsh environments. Since the first report of a Ga2O3 field-effect transistor (FET) in 2012, Ga2O3 power devices have undergone tremendous technological advancement. This talk reviews the progress we have made and the lessons we have learnt on both lateral and vertical Ga2O3 metal-oxide-semiconductor (MOS) FETs. Future development directions will also be discussed., 20th Workshop on Dielectrics in Microelectronics},
 title = {Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs},
 year = {2018}
}