{"created":"2023-05-15T14:53:51.175947+00:00","id":73330,"links":{},"metadata":{"_buckets":{"deposit":"a9bff4b5-33e7-43ff-ac11-d91a83c6cc3c"},"_deposit":{"created_by":1,"id":"73330","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73330"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073330","sets":["10:27"]},"author_link":["722492","722484","722486","722495","722498","722496","722487","722490","722494","722493","722489","722491","722499","722497","722485","722488","722500"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-06-12","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Gallium oxide (Ga2O3) is an emerging ultra-wide-bandgap (4.5–4.9 eV) semiconductor for high power and high voltage electronics with potential applications in harsh environments. Since the first report of a Ga2O3 field-effect transistor (FET) in 2012, Ga2O3 power devices have undergone tremendous technological advancement. This talk reviews the progress we have made and the lessons we have learnt on both lateral and vertical Ga2O3 metal-oxide-semiconductor (MOS) FETs. Future development directions will also be discussed.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"20th Workshop on Dielectrics in Microelectronics","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Hoi, Wong Man"}],"nameIdentifiers":[{"nameIdentifier":"722484","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakata, Yoshiaki"}],"nameIdentifiers":[{"nameIdentifier":"722485","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Lin, Chia-Hung"}],"nameIdentifiers":[{"nameIdentifier":"722486","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Kohei"}],"nameIdentifiers":[{"nameIdentifier":"722487","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Morikawa, Yoji"}],"nameIdentifiers":[{"nameIdentifier":"722488","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Ken"}],"nameIdentifiers":[{"nameIdentifier":"722489","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori"}],"nameIdentifiers":[{"nameIdentifier":"722490","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"722491","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"722492","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuramata, Akito"}],"nameIdentifiers":[{"nameIdentifier":"722493","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Yamakoshi, Shigenobu"}],"nameIdentifiers":[{"nameIdentifier":"722494","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murakami, Hisashi"}],"nameIdentifiers":[{"nameIdentifier":"722495","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumagai, Yoshinao"}],"nameIdentifiers":[{"nameIdentifier":"722496","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Higashiwaki, Masataka"}],"nameIdentifiers":[{"nameIdentifier":"722497","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722498","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722499","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722500","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs"}]},"item_type_id":"10005","owner":"1","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-08-21"},"publish_date":"2018-08-21","publish_status":"0","recid":"73330","relation_version_is_last":true,"title":["Reflections on the State of Ultra-Wide-Bandgap Ga2O3 MOSFETs"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:30:30.495065+00:00"}