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Ultra-Wide-Bandgap Ga2O3 Material and Electronic Device Technologies
https://repo.qst.go.jp/records/73316
https://repo.qst.go.jp/records/7331617d25a89-2fc8-4eb7-b619-37f8cc36c175
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-03-19 | |||||
| タイトル | ||||||
| タイトル | Ultra-Wide-Bandgap Ga2O3 Material and Electronic Device Technologies | |||||
| 言語 | ||||||
| 言語 | jpn | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Higashiwaki, Masataka
× Higashiwaki, Masataka× Hoi, Wong Man× Konishi, Keita× Nakata, Yoshiaki× Kamimura, Takafumi× Sasaki, Kohei× Goto, Ken× 武山, 昭憲× 牧野, 高紘× 大島, 武× Murakami, Hisashi× Kumagai, Yoshinao× Kuramata, Akito× 武山 昭憲× 牧野 高紘× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Recently, gallium oxide (Ga2O3) has attracted much attention as a candidate for future power and harsh environment electronics due to its extremely large bandgap of 4.5 eV and the availability of economical melt-grown native substrates. In this talk, following a short introduction of the material properties of Ga2O3, we will discuss our recent progress in the development of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs), including Ga2O3 thin-film epitaxial growth technologies by molecular beam epitaxy (MBE) and halide vapor phase epitaxy (HVPE). State-of-the-art Ga2O3 MOSFETs with a gate-connected field plate (FP) were fabricated using MBE-grown Ga2O3 homoepitaxial layers. The devices showed excellent room-temperature (RT) characteristics such as a record high off-state breakdown voltage (Vbr) of 755 V, a large drain current on/off ratio of over nine orders of magnitude, and DC-RF dispersion-free output characteristics. Furthermore, the MOSFETs demonstrated strong prospects of Ga2O3 devices for extreme environment electronics by virtue of their stable high-temperature operation up to 300°C and strong radiation hardness against gamma-ray irradiation. We have also fabricated and characterized Pt/Ga2O3 FP-SBDs on n--Ga2O3 drift layers grown by HVPE. The illustrative device with a net donor concentration of 1.8×1016 cm-3 exhibited a specific on-resistance of 5.1 mΩ·cm2 and an ideality factor of 1.05 at RT. Successful FP engineering resulted in a high Vbr of 1076 V. Note that this was the first demonstration of Vbr of over 1 kV in any Ga2O3 power device. The maximum electric field in the Ga2O3 drift layer at the condition of destructive breakdown was estimated to be 5.1 MV/cm by device simulation, which is about two times larger than the theoretical limits for SiC and GaN. |
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| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | the AVS 65 th International Symposium and Exhibition | |||||
| 発表年月日 | ||||||
| 日付 | 2017-10-29 | |||||
| 日付タイプ | Issued | |||||
