{"created":"2023-05-15T14:53:50.526793+00:00","id":73316,"links":{},"metadata":{"_buckets":{"deposit":"a866513d-0c7d-4560-82d3-2afb50a75627"},"_deposit":{"created_by":1,"id":"73316","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73316"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073316","sets":["10:27"]},"author_link":["722401","722410","722403","722402","722399","722404","722406","722407","722412","722411","722405","722409","722413","722400","722408","722414"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2017-10-29","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Recently, gallium oxide (Ga2O3) has attracted much attention as a candidate for future power and harsh environment electronics due to its extremely large bandgap of 4.5 eV and the availability of economical melt-grown native substrates. In this talk, following a short introduction of the material properties of Ga2O3, we will discuss our recent progress in the development of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs), including Ga2O3 thin-film epitaxial growth technologies by molecular beam epitaxy (MBE) and halide vapor phase epitaxy (HVPE).\nState-of-the-art Ga2O3 MOSFETs with a gate-connected field plate (FP) were fabricated using MBE-grown Ga2O3 homoepitaxial layers. The devices showed excellent room-temperature (RT) characteristics such as a record high off-state breakdown voltage (Vbr) of 755 V, a large drain current on/off ratio of over nine orders of magnitude, and DC-RF dispersion-free output characteristics. Furthermore, the MOSFETs demonstrated strong prospects of Ga2O3 devices for extreme environment electronics by virtue of their stable high-temperature operation up to 300°C and strong radiation hardness against gamma-ray irradiation.\nWe have also fabricated and characterized Pt/Ga2O3 FP-SBDs on n--Ga2O3 drift layers grown by HVPE. The illustrative device with a net donor concentration of 1.8×1016 cm-3 exhibited a specific on-resistance of 5.1 mΩ·cm2 and an ideality factor of 1.05 at RT. Successful FP engineering resulted in a high Vbr of 1076 V. Note that this was the first demonstration of Vbr of over 1 kV in any Ga2O3 power device. The maximum electric field in the Ga2O3 drift layer at the condition of destructive breakdown was estimated to be 5.1 MV/cm by device simulation, which is about two times larger than the theoretical limits for SiC and GaN.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"the AVS 65 th International Symposium and Exhibition","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Higashiwaki, Masataka"}],"nameIdentifiers":[{"nameIdentifier":"722399","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Hoi, Wong Man"}],"nameIdentifiers":[{"nameIdentifier":"722400","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Konishi, Keita"}],"nameIdentifiers":[{"nameIdentifier":"722401","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakata, Yoshiaki"}],"nameIdentifiers":[{"nameIdentifier":"722402","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kamimura, Takafumi"}],"nameIdentifiers":[{"nameIdentifier":"722403","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sasaki, Kohei"}],"nameIdentifiers":[{"nameIdentifier":"722404","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Goto, Ken"}],"nameIdentifiers":[{"nameIdentifier":"722405","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山, 昭憲"}],"nameIdentifiers":[{"nameIdentifier":"722406","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野, 高紘"}],"nameIdentifiers":[{"nameIdentifier":"722407","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島, 武"}],"nameIdentifiers":[{"nameIdentifier":"722408","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Murakami, Hisashi"}],"nameIdentifiers":[{"nameIdentifier":"722409","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kumagai, Yoshinao"}],"nameIdentifiers":[{"nameIdentifier":"722410","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuramata, Akito"}],"nameIdentifiers":[{"nameIdentifier":"722411","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"武山 昭憲","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722412","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"牧野 高紘","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722413","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"722414","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Ultra-Wide-Bandgap Ga2O3 Material and Electronic Device Technologies","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Ultra-Wide-Bandgap Ga2O3 Material and Electronic Device Technologies"}]},"item_type_id":"10005","owner":"1","path":["27"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-19"},"publish_date":"2018-03-19","publish_status":"0","recid":"73316","relation_version_is_last":true,"title":["Ultra-Wide-Bandgap Ga2O3 Material and Electronic Device Technologies"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:30:39.382690+00:00"}