@misc{oai:repo.qst.go.jp:00073316,
 author = {Higashiwaki, Masataka and Hoi, Wong Man and Konishi, Keita and Nakata, Yoshiaki and Kamimura, Takafumi and Sasaki, Kohei and Goto, Ken and 武山, 昭憲 and 牧野, 高紘 and 大島, 武 and Murakami, Hisashi and Kumagai, Yoshinao and Kuramata, Akito and 武山 昭憲 and 牧野 高紘 and 大島 武},
 month = {Oct},
 note = {Recently, gallium oxide (Ga2O3) has attracted much attention as a candidate for future power and harsh environment electronics due to its extremely large bandgap of 4.5 eV and the availability of economical melt-grown native substrates. In this talk, following a short introduction of the material properties of Ga2O3, we will discuss our recent progress in the development of Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) and Schottky barrier diodes (SBDs), including Ga2O3 thin-film epitaxial growth technologies by molecular beam epitaxy (MBE) and halide vapor phase epitaxy (HVPE).
State-of-the-art Ga2O3 MOSFETs with a gate-connected field plate (FP) were fabricated using MBE-grown Ga2O3 homoepitaxial layers. The devices showed excellent room-temperature (RT) characteristics such as a record high off-state breakdown voltage (Vbr) of 755 V, a large drain current on/off ratio of over nine orders of magnitude, and DC-RF dispersion-free output characteristics. Furthermore, the MOSFETs demonstrated strong prospects of Ga2O3 devices for extreme environment electronics by virtue of their stable high-temperature operation up to 300°C and strong radiation hardness against gamma-ray irradiation.
We have also fabricated and characterized Pt/Ga2O3 FP-SBDs on n--Ga2O3 drift layers grown by HVPE. The illustrative device with a net donor concentration of 1.8×1016 cm-3 exhibited a specific on-resistance of 5.1 mΩ·cm2 and an ideality factor of 1.05 at RT. Successful FP engineering resulted in a high Vbr of 1076 V. Note that this was the first demonstration of Vbr of over 1 kV in any Ga2O3 power device. The maximum electric field in the Ga2O3 drift layer at the condition of destructive breakdown was estimated to be 5.1 MV/cm by device simulation, which is about two times larger than the theoretical limits for SiC and GaN., the AVS 65 th International Symposium and Exhibition},
 title = {Ultra-Wide-Bandgap Ga2O3 Material and Electronic Device Technologies},
 year = {2017}
}