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Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model.
https://repo.qst.go.jp/records/73151
https://repo.qst.go.jp/records/73151b218f1da-5b7b-4f4f-9587-89c221880b2f
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-01-17 | |||||
| タイトル | ||||||
| タイトル | Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model. | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐々木, 明
× 佐々木, 明× 佐々木 明 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Resolution, line-edge roughness (LWR), and sensitivity of photoresists have an essential importance for the realization of the extreme ultraviolet (EUV) lithography. We show the image formation of photoresists for the extreme-ultraviolet lithography (EUV) using computer simulation. We use the percolation model to investigate the LWR of metal nano-particle resists, which cause condensation by the absorption of EUV photon to form the negate-tone image. Calculation shows threshold dose for image formation of 20 mJ/cm2 for the metal particles with typical parameters. We also investigate how the roughness initially produced by the photon shot noise develops during the process of development using diffusion-limited aggregation model. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | 第２回QST国際シンポジウム | |||||
| 発表年月日 | ||||||
| 日付 | 2018-11-28 | |||||
| 日付タイプ | Issued | |||||
