@misc{oai:repo.qst.go.jp:00073151,
 author = {佐々木, 明 and 佐々木 明},
 month = {Nov},
 note = {Resolution, line-edge roughness (LWR), and sensitivity of photoresists have an essential importance for the realization of the extreme ultraviolet (EUV) lithography. We show the image formation of photoresists for the extreme-ultraviolet lithography (EUV) using computer simulation. We use the percolation model to investigate the LWR of metal nano-particle resists, which cause condensation by the absorption of EUV photon to form the negate-tone image. Calculation shows threshold dose for image formation of 20 mJ/cm2 for the metal particles with typical parameters. We also investigate how the roughness initially produced by the photon shot noise develops during the process of development using diffusion-limited aggregation model., 第２回QST国際シンポジウム},
 title = {Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model.},
 year = {2018}
}