{"created":"2023-05-15T14:53:42.959441+00:00","id":73151,"links":{},"metadata":{"_buckets":{"deposit":"0ed8a065-b82f-4f05-9f93-78e7d9fdcb3a"},"_deposit":{"created_by":1,"id":"73151","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"73151"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00073151","sets":["10:28"]},"author_link":["720807","720806"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-11-28","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Resolution, line-edge roughness (LWR), and sensitivity of photoresists have an essential importance for the realization of the extreme ultraviolet (EUV) lithography. We show the image formation of photoresists for the extreme-ultraviolet lithography (EUV) using computer simulation. We use the percolation model to investigate the LWR of metal nano-particle resists, which cause condensation by the absorption of EUV photon to form the negate-tone image. Calculation shows threshold dose for image formation of 20 mJ/cm2 for the metal particles with typical parameters. We also investigate how the roughness initially produced by the photon shot noise develops during the process of development using diffusion-limited aggregation model.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"第２回QST国際シンポジウム","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 明"}],"nameIdentifiers":[{"nameIdentifier":"720806","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 明","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"720807","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":" Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model.","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":" Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model."}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-01-17"},"publish_date":"2019-01-17","publish_status":"0","recid":"73151","relation_version_is_last":true,"title":[" Simulation of statistical effects in exposure and development of EUV photoresists using the percolation and diffusion limited aggregation model."],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:32:21.139599+00:00"}