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Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping
https://repo.qst.go.jp/records/72948
https://repo.qst.go.jp/records/72948d6b8fb94-c03c-4b2a-a896-0f37310d2543
| Item type | 会議発表用資料 / Presentation(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-09-22 | |||||
| タイトル | ||||||
| タイトル | Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_c94f | |||||
| 資源タイプ | conference object | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐々木, 拓生
× 佐々木, 拓生× 高橋, 正光× 佐々木 拓生× 高橋 正光 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | In situ synchrotron X-ray reciprocal space mapping was employed for studying the strain evolution of the MBE-grown InGaAs/InAs/GaAs(111)A structure. We found that the InGaAs growth induces the decrease in lattice parameters of InAs in the surface normal and in plane directions. This unique behavior caused by an interaction between the growing and underlying layers would be related to an interfacial diffusion of indium atoms during growth. | |||||
| 会議概要（会議名, 開催地, 会期, 主催者等） | ||||||
| 内容記述タイプ | Other | |||||
| 内容記述 | The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018) | |||||
| 発表年月日 | ||||||
| 日付 | 2018-09-03 | |||||
| 日付タイプ | Issued | |||||
