@misc{oai:repo.qst.go.jp:00072948,
 author = {佐々木, 拓生 and 高橋, 正光 and 佐々木 拓生 and 高橋 正光},
 month = {Sep},
 note = {In situ synchrotron X-ray reciprocal space mapping was employed for studying the strain evolution of the MBE-grown InGaAs/InAs/GaAs(111)A structure. We found that the InGaAs growth induces the decrease in lattice parameters of InAs in the surface normal and in plane directions. This unique behavior caused by an interaction between the growing and underlying layers would be related to an interfacial diffusion of indium atoms during growth., The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)},
 title = {Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping},
 year = {2018}
}