{"created":"2023-05-15T14:53:34.078547+00:00","id":72948,"links":{},"metadata":{"_buckets":{"deposit":"86fc43c7-f1e4-471c-a175-0f4ddfb1ea5f"},"_deposit":{"created_by":1,"id":"72948","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"72948"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00072948","sets":["10:28"]},"author_link":["718792","718793","718795","718794"],"item_10005_date_7":{"attribute_name":"発表年月日","attribute_value_mlt":[{"subitem_date_issued_datetime":"2018-09-03","subitem_date_issued_type":"Issued"}]},"item_10005_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"In situ synchrotron X-ray reciprocal space mapping was employed for studying the strain evolution of the MBE-grown InGaAs/InAs/GaAs(111)A structure. We found that the InGaAs growth induces the decrease in lattice parameters of InAs in the surface normal and in plane directions. This unique behavior caused by an interaction between the growing and underlying layers would be related to an interfacial diffusion of indium atoms during growth.","subitem_description_type":"Abstract"}]},"item_10005_description_6":{"attribute_name":"会議概要（会議名, 開催地, 会期, 主催者等）","attribute_value_mlt":[{"subitem_description":"The 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018)","subitem_description_type":"Other"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐々木, 拓生"}],"nameIdentifiers":[{"nameIdentifier":"718792","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋, 正光"}],"nameIdentifiers":[{"nameIdentifier":"718793","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐々木 拓生","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"718794","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"高橋 正光","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"718795","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference object","resourceuri":"http://purl.org/coar/resource_type/c_c94f"}]},"item_title":"Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping"}]},"item_type_id":"10005","owner":"1","path":["28"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-09-22"},"publish_date":"2018-09-22","publish_status":"0","recid":"72948","relation_version_is_last":true,"title":["Real-time structural analysis of InGaAs/InAs/GaAs(111)A interfaces by in situ synchrotron X-ray reciprocal space mapping"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T19:34:21.687957+00:00"}