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  1. プロシーディングス

Single Event Effects Induced on Atom Switch based Field Programmable Gate Array

https://repo.qst.go.jp/records/54921
https://repo.qst.go.jp/records/54921
feac5609-349d-4a56-ac38-a800f7222744
Item type 会議発表論文 / Conference Paper(1)
公開日 2018-08-24
タイトル
タイトル Single Event Effects Induced on Atom Switch based Field Programmable Gate Array
言語
言語 eng
資源タイプ
資源タイプ識別子 http://purl.org/coar/resource_type/c_5794
資源タイプ conference paper
アクセス権
アクセス権 metadata only access
アクセス権URI http://purl.org/coar/access_right/c_14cb
著者 Takeuchi, K.

× Takeuchi, K.

WEKO 757422

Takeuchi, K.

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Sakamoto, T.

× Sakamoto, T.

WEKO 757423

Sakamoto, T.

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Tada, M.

× Tada, M.

WEKO 757424

Tada, M.

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Takeyama, A.

× Takeyama, A.

WEKO 757425

Takeyama, A.

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Ohshima, T.

× Ohshima, T.

WEKO 757426

Ohshima, T.

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Kuboyama, S.

× Kuboyama, S.

WEKO 757427

Kuboyama, S.

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Shindo, H.

× Shindo, H.

WEKO 757428

Shindo, H.

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Takeyama, Akinori

× Takeyama, Akinori

WEKO 757429

en Takeyama, Akinori

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Ohshima, Takeshi

× Ohshima, Takeshi

WEKO 757430

en Ohshima, Takeshi

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抄録
内容記述タイプ Abstract
内容記述 Single event effects (SEEs) of atom switches (ASs)
embedded on 40-nm complementary metal oxide semiconductor
(CMOS) are investigated with both heavy ion and pulsed laser
irradiation. In the evaluation of atom switch based field
programmable Gate Array (AS-FPGA), ASs shows immunity
against the irradiation and there is no change of the state of ASs
both in a cross-bar switch and memory in look up tables (LUTs).
It is supposed that ASs do not make any single event transients
(SETs) noise when the ions hit. On the other hand, the CMOS layer
shows SETs and new approaches to solve the SET in CMOS are
proposed, especially for AS-FPGA application.
書誌情報 RADECS 2018 Proceedings

発行日 2018-08
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