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Single Event Effects Induced on Atom Switch based Field Programmable Gate Array
https://repo.qst.go.jp/records/54921
https://repo.qst.go.jp/records/54921feac5609-349d-4a56-ac38-a800f7222744
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-24 | |||||
| タイトル | ||||||
| タイトル | Single Event Effects Induced on Atom Switch based Field Programmable Gate Array | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Takeuchi, K.
× Takeuchi, K.× Sakamoto, T.× Tada, M.× Takeyama, A.× Ohshima, T.× Kuboyama, S.× Shindo, H.× Takeyama, Akinori× Ohshima, Takeshi |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single event effects (SEEs) of atom switches (ASs) embedded on 40-nm complementary metal oxide semiconductor (CMOS) are investigated with both heavy ion and pulsed laser irradiation. In the evaluation of atom switch based field programmable Gate Array (AS-FPGA), ASs shows immunity against the irradiation and there is no change of the state of ASs both in a cross-bar switch and memory in look up tables (LUTs). It is supposed that ASs do not make any single event transients (SETs) noise when the ions hit. On the other hand, the CMOS layer shows SETs and new approaches to solve the SET in CMOS are proposed, especially for AS-FPGA application. |
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| 書誌情報 |
RADECS 2018 Proceedings 発行日 2018-08 |
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