{"created":"2023-05-15T14:40:01.290323+00:00","id":54921,"links":{},"metadata":{"_buckets":{"deposit":"9a215beb-ef2a-402c-9a2a-8fd8f427ae76"},"_deposit":{"created_by":1,"id":"54921","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"54921"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00054921","sets":["2"]},"author_link":["757425","757423","757427","757426","757424","757429","757430","757422","757428"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-08","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"RADECS 2018 Proceedings"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Single event effects (SEEs) of atom switches (ASs)\nembedded on 40-nm complementary metal oxide semiconductor\n(CMOS) are investigated with both heavy ion and pulsed laser\nirradiation. In the evaluation of atom switch based field\nprogrammable Gate Array (AS-FPGA), ASs shows immunity\nagainst the irradiation and there is no change of the state of ASs\nboth in a cross-bar switch and memory in look up tables (LUTs).\nIt is supposed that ASs do not make any single event transients\n(SETs) noise when the ions hit. On the other hand, the CMOS layer\nshows SETs and new approaches to solve the SET in CMOS are\nproposed, especially for AS-FPGA application.","subitem_description_type":"Abstract"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Takeuchi, K."}],"nameIdentifiers":[{"nameIdentifier":"757422","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sakamoto, T."}],"nameIdentifiers":[{"nameIdentifier":"757423","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tada, M."}],"nameIdentifiers":[{"nameIdentifier":"757424","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, A."}],"nameIdentifiers":[{"nameIdentifier":"757425","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, T."}],"nameIdentifiers":[{"nameIdentifier":"757426","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kuboyama, S."}],"nameIdentifiers":[{"nameIdentifier":"757427","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Shindo, H."}],"nameIdentifiers":[{"nameIdentifier":"757428","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Takeyama, Akinori","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"757429","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"757430","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Single Event Effects Induced on Atom Switch based Field Programmable Gate Array","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Single Event Effects Induced on Atom Switch based Field Programmable Gate Array"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-08-24"},"publish_date":"2018-08-24","publish_status":"0","recid":"54921","relation_version_is_last":true,"title":["Single Event Effects Induced on Atom Switch based Field Programmable Gate Array"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-16T00:46:58.089085+00:00"}