@inproceedings{oai:repo.qst.go.jp:00054921,
 author = {Takeuchi, K. and Sakamoto, T. and Tada, M. and Takeyama, A. and Ohshima, T. and Kuboyama, S. and Shindo, H. and Takeyama, Akinori and Ohshima, Takeshi},
 book = {RADECS 2018 Proceedings},
 month = {Aug},
 note = {Single event effects (SEEs) of atom switches (ASs)
embedded on 40-nm complementary metal oxide semiconductor
(CMOS) are investigated with both heavy ion and pulsed laser
irradiation. In the evaluation of atom switch based field
programmable Gate Array (AS-FPGA), ASs shows immunity
against the irradiation and there is no change of the state of ASs
both in a cross-bar switch and memory in look up tables (LUTs).
It is supposed that ASs do not make any single event transients
(SETs) noise when the ions hit. On the other hand, the CMOS layer
shows SETs and new approaches to solve the SET in CMOS are
proposed, especially for AS-FPGA application.},
 title = {Single Event Effects Induced on Atom Switch based Field Programmable Gate Array},
 year = {2018}
}