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Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence
https://repo.qst.go.jp/records/54864
https://repo.qst.go.jp/records/5486458d9ebf2-00a6-46c7-a3d0-d4237381d6ce
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-03-13 | |||||
| タイトル | ||||||
| タイトル | Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
D., Haque M.
× D., Haque M.× Kamata, N.× Sato, Shinichiro× M., Hubbard S.× 佐藤 真一郎 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot (QD) structure generated by 3 MeV proton irradiation is performed by two wavelength excited photoluminescence (TWEPL). The above-gap excitation (AGE) source of 2.33 eV or 1.26 eV is used to excite GaAs host material or InAs QDs, respectively. The QD PL intensity decreased after irradiation of below-gap excitation (BGE) of 0.75 eV over AGE, indicating a pair of NRR centers activated. The proton irradiation at fluence of 7×1011cm-2 reduces the NRR density, while that of 4×1012cm-2 increases it. Defect formation, carrier injection and their fluence dependence explain experimental results. | |||||
| 書誌情報 |
Proceedings of the 44th IEEE Photovoltaic Specialists Conference 発行日 2018-02 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
