@inproceedings{oai:repo.qst.go.jp:00054864,
 author = {D., Haque M. and Kamata, N. and Sato, Shinichiro and M., Hubbard S. and 佐藤 真一郎},
 book = {Proceedings of the 44th IEEE Photovoltaic Specialists Conference},
 month = {Feb},
 note = {Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot (QD) structure generated by 3 MeV proton irradiation is performed by two wavelength excited photoluminescence (TWEPL). The above-gap excitation (AGE) source of 2.33 eV or 1.26 eV is used to excite GaAs host material or InAs QDs, respectively. The QD PL intensity decreased after irradiation of below-gap excitation (BGE) of 0.75 eV over AGE, indicating a pair of NRR centers activated. The proton irradiation at fluence of 7×1011cm-2 reduces the NRR density, while that of 4×1012cm-2 increases it. Defect formation, carrier injection and their fluence dependence explain experimental results.},
 publisher = {IEEE},
 title = {Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence},
 year = {2018}
}