{"created":"2023-05-15T14:39:58.762516+00:00","id":54864,"links":{},"metadata":{"_buckets":{"deposit":"994ef9d0-046e-4fbf-92a9-559db0376cee"},"_deposit":{"created_by":1,"id":"54864","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"54864"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00054864","sets":["2"]},"author_link":["561053","561057","561056","561054","561055"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-02","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"Proceedings of the 44th IEEE Photovoltaic Specialists Conference"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Comparative study on nonradiative recombination (NRR) centers in InAs/GaAs quantum dot (QD) structure generated by 3 MeV proton irradiation is performed by two wavelength excited photoluminescence (TWEPL). The above-gap excitation (AGE) source of 2.33 eV or 1.26 eV is used to excite GaAs host material or InAs QDs, respectively. The QD PL intensity decreased after irradiation of below-gap excitation (BGE) of 0.75 eV over AGE, indicating a pair of NRR centers activated. The proton irradiation at fluence of 7×1011cm-2 reduces the NRR density, while that of 4×1012cm-2 increases it. Defect formation, carrier injection and their fluence dependence explain experimental results. ","subitem_description_type":"Abstract"}]},"item_10003_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"D., Haque M."}],"nameIdentifiers":[{"nameIdentifier":"561053","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kamata, N."}],"nameIdentifiers":[{"nameIdentifier":"561054","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro"}],"nameIdentifiers":[{"nameIdentifier":"561055","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"M., Hubbard S."}],"nameIdentifiers":[{"nameIdentifier":"561056","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"561057","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-13"},"publish_date":"2018-03-13","publish_status":"0","recid":"54864","relation_version_is_last":true,"title":["Comparative Study on Nonradiative Recombination Centers in Proton Irradiated InAs/GaAs Quantum Dot Structure by Two Wavelength Excited Photoluminescence"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:55:54.476839+00:00"}