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Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy
https://repo.qst.go.jp/records/54860
https://repo.qst.go.jp/records/54860f0439096-a2cf-4c25-8235-d5f466b03de0
| Item type | 会議発表論文 / Conference Paper(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-03-12 | |||||
| タイトル | ||||||
| タイトル | Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_5794 | |||||
| 資源タイプ | conference paper | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
佐藤, 真一郎
× 佐藤, 真一郎× Sugaya, Takeyoshi× Nakamura, Tetsuya× Ohshima, Takeshi× 佐藤 真一郎× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Radiation degradation characterization method for solar cells embedded with quantum dot (QD) layers using Photo-Induced Current Transient Spectroscopy (PICTS) is proposed in this study. Contrary to Deep Level Transient Spectroscopy (DLTS), PICTS is capable of comparing directly photo-current degradation to radiation induced defects for p-i-n structure solar cells, which is a basic structure of QD solar cells. GaAs p-i-n solar cells with 50 In0.4Ga0.6As QD layers are fabricated by Molecular Beam Epitaxy (MBE) and the radiation degradation is investigated by PICTS measurement. The current-voltage characteristics under AM0, 1 sun condition is also investigated and the degradation of solar cell performance is discussed by comparison to defect levels obtained from PICTS spectra. GaAs p-i-n solar cells without QDs are also investigated for comparison. | |||||
| 書誌情報 |
Proceedings of the 44th IEEE Photovoltaic Specialists Conference 発行日 2018-02 |
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| 出版者 | ||||||
| 出版者 | IEEE | |||||
