@inproceedings{oai:repo.qst.go.jp:00054860,
 author = {佐藤, 真一郎 and Sugaya, Takeyoshi and Nakamura, Tetsuya and Ohshima, Takeshi and 佐藤 真一郎 and 大島 武},
 book = {Proceedings of the 44th IEEE Photovoltaic Specialists Conference},
 month = {Feb},
 note = {Radiation degradation characterization method for solar cells embedded with quantum dot (QD) layers using Photo-Induced Current Transient Spectroscopy (PICTS) is proposed in this study. Contrary to Deep Level Transient Spectroscopy (DLTS), PICTS is capable of comparing directly photo-current degradation to radiation induced defects for p-i-n structure solar cells, which is a basic structure of QD solar cells. GaAs p-i-n solar cells with 50 In0.4Ga0.6As QD layers are fabricated by Molecular Beam Epitaxy (MBE) and the radiation degradation is investigated by PICTS measurement. The current-voltage characteristics under AM0, 1 sun condition is also investigated and the degradation of solar cell performance is discussed by comparison to defect levels obtained from PICTS spectra. GaAs p-i-n solar cells without QDs are also investigated for comparison.},
 publisher = {IEEE},
 title = {Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy},
 year = {2018}
}