{"created":"2023-05-15T14:39:58.586116+00:00","id":54860,"links":{},"metadata":{"_buckets":{"deposit":"66d5f3e0-a506-4dc9-9940-6134e0185b13"},"_deposit":{"created_by":1,"id":"54860","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"54860"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00054860","sets":["2"]},"author_link":["561028","561027","561030","561029","561026","561025"],"item_10003_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-02","bibliographicIssueDateType":"Issued"},"bibliographic_titles":[{"bibliographic_title":"Proceedings of the 44th IEEE Photovoltaic Specialists Conference"}]}]},"item_10003_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Radiation degradation characterization method for solar cells embedded with quantum dot (QD) layers using Photo-Induced Current Transient Spectroscopy (PICTS) is proposed in this study. Contrary to Deep Level Transient Spectroscopy (DLTS), PICTS is capable of comparing directly photo-current degradation to radiation induced defects for p-i-n structure solar cells, which is a basic structure of QD solar cells. GaAs p-i-n solar cells with 50 In0.4Ga0.6As QD layers are fabricated by Molecular Beam Epitaxy (MBE) and the radiation degradation is investigated by PICTS measurement. The current-voltage characteristics under AM0, 1 sun condition is also investigated and the degradation of solar cell performance is discussed by comparison to defect levels obtained from PICTS spectra. GaAs p-i-n solar cells without QDs are also investigated for comparison.","subitem_description_type":"Abstract"}]},"item_10003_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IEEE"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"佐藤, 真一郎"}],"nameIdentifiers":[{"nameIdentifier":"561025","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sugaya, Takeyoshi"}],"nameIdentifiers":[{"nameIdentifier":"561026","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Nakamura, Tetsuya"}],"nameIdentifiers":[{"nameIdentifier":"561027","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"561028","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 真一郎","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"561029","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"561030","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"conference paper","resourceuri":"http://purl.org/coar/resource_type/c_5794"}]},"item_title":"Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy"}]},"item_type_id":"10003","owner":"1","path":["2"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-03-12"},"publish_date":"2018-03-12","publish_status":"0","recid":"54860","relation_version_is_last":true,"title":["Defect Characterization of III-V Quantum Structure Solar Cells Using Photo-Induced Current Transient Spectroscopy"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T22:55:57.124255+00:00"}