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Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling
https://repo.qst.go.jp/records/49475
https://repo.qst.go.jp/records/49475e8c43101-a0fc-4912-9aa1-4c32856b9144
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-01-18 | |||||
| タイトル | ||||||
| タイトル | Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Capan, Ivana
× Capan, Ivana× Brodar, Tomislav× Coutinho, Jose× Ohshima, Takeshi× P., Markevich Vladimir× R., Peaker Anthony× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The broad Z1=2 peak, was commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC. The peak has two components, namely, Z1 and Z2, of which activation energies for electron emissions are 0.59 and 0.67 eV, respectively. We assign that these components have negative-U ordered acceptor levels of carbon vacancy (Vc) defects at hexagonal/pseudo-cubic sites, respectively. | |||||
| 書誌情報 |
Journal of Applied Physics 巻 124, p. 245701, 発行日 2018-12 |
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| 出版者 | ||||||
| 出版者 | AIP Publishing | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1063/1.5063773 | |||||
