@article{oai:repo.qst.go.jp:00049475,
 author = {Capan, Ivana and Brodar, Tomislav and Coutinho, Jose and Ohshima, Takeshi and P., Markevich Vladimir and R., Peaker Anthony and 大島 武},
 journal = {Journal of Applied Physics},
 month = {Dec},
 note = {The broad Z1=2 peak, was commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC. The peak has two components, namely, Z1 and Z2, of which activation energies for electron emissions are 0.59 and 0.67 eV, respectively. We assign that these components have negative-U ordered acceptor levels of carbon vacancy (Vc) defects at hexagonal/pseudo-cubic sites, respectively.},
 title = {Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling},
 volume = {124},
 year = {2018}
}