{"created":"2023-05-15T14:38:20.241462+00:00","id":49475,"links":{},"metadata":{"_buckets":{"deposit":"8ecc6c01-2eae-4e7c-b257-e019e015fe3c"},"_deposit":{"created_by":1,"id":"49475","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49475"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049475","sets":["1"]},"author_link":["499695","499694","499693","499689","499692","499690","499691"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-12","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"245701","bibliographicVolumeNumber":"124","bibliographic_titles":[{"bibliographic_title":"Journal of Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"The broad Z1=2 peak, was commonly observed by conventional deep level transient spectroscopy in as-grown and at high concentrations in radiation damaged 4H-SiC. The peak has two components, namely, Z1 and Z2, of which activation energies for electron emissions are 0.59 and 0.67 eV, respectively. We assign that these components have negative-U ordered acceptor levels of carbon vacancy (Vc) defects at hexagonal/pseudo-cubic sites, respectively. ","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"AIP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1063/1.5063773","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Capan, Ivana"}],"nameIdentifiers":[{"nameIdentifier":"499689","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Brodar, Tomislav"}],"nameIdentifiers":[{"nameIdentifier":"499690","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Coutinho, Jose"}],"nameIdentifiers":[{"nameIdentifier":"499691","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"499692","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"P., Markevich Vladimir"}],"nameIdentifiers":[{"nameIdentifier":"499693","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"R., Peaker Anthony"}],"nameIdentifiers":[{"nameIdentifier":"499694","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"499695","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-01-18"},"publish_date":"2019-01-18","publish_status":"0","recid":"49475","relation_version_is_last":true,"title":["Acceptor levels of the carbon vacancy in 4H-SiC: Combining Laplace deep level transient spectroscopy with density functional modeling"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:19:31.783957+00:00"}