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Excitation properties of the divacancy in 4H-SiC
https://repo.qst.go.jp/records/49474
https://repo.qst.go.jp/records/494741351e2f2-0ed3-429c-9a58-e735e724fd0f
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2019-01-18 | |||||
| タイトル | ||||||
| タイトル | Excitation properties of the divacancy in 4H-SiC | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Magnusson, Bjorn
× Magnusson, Bjorn× Tien, Son Nguyen× Csore, Andras× Gallstrom, Andreas× Ohshima, Takeshi× Gali, Adam× G., Ivanov Ivan× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We investigate the photoluminescence (PL) quenching for the divacancy defect in 4H-SiC. The quenching appears only when the PL is excited below certain photon energies. An accurate theoretical ab initio calculation for the charge-transfer levels of the divacancy shows very good agreement between the position of the (0/−) level with respect to the conduction band for each divacancy configuration and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state because of the capture of electrons photoionized from other defects (traps) by the excitation. Electron spin resonance measurements are conducted in the dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. |
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| 書誌情報 |
Physical Review B 巻 98, p. 195202, 発行日 2018-11 |
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| 出版者 | ||||||
| 出版者 | American Physical Society | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1103/PhysRevB.98.195202 | |||||
