{"created":"2023-05-15T14:38:20.193762+00:00","id":49474,"links":{},"metadata":{"_buckets":{"deposit":"1d6b1fc6-9045-4c11-b982-e2fcc6b3b763"},"_deposit":{"created_by":1,"id":"49474","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49474"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049474","sets":["1"]},"author_link":["499686","499687","499688","499685","499681","499683","499684","499682"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-11","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"195202","bibliographicVolumeNumber":"98","bibliographic_titles":[{"bibliographic_title":"Physical Review B"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We investigate the photoluminescence (PL) quenching for the divacancy defect in 4H-SiC. The quenching appears only when the PL is excited below certain photon energies. An accurate theoretical ab initio calculation for the charge-transfer levels of the divacancy shows very good agreement between the position of the (0/−) level with respect to the conduction band for each divacancy\nconfiguration and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state because of the capture of electrons photoionized from other defects (traps) by the excitation. Electron spin resonance measurements are conducted in the dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples. ","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevB.98.195202","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Magnusson, Bjorn"}],"nameIdentifiers":[{"nameIdentifier":"499681","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Tien, Son Nguyen"}],"nameIdentifiers":[{"nameIdentifier":"499682","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Csore, Andras"}],"nameIdentifiers":[{"nameIdentifier":"499683","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gallstrom, Andreas"}],"nameIdentifiers":[{"nameIdentifier":"499684","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"499685","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Gali, Adam"}],"nameIdentifiers":[{"nameIdentifier":"499686","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"G., Ivanov Ivan"}],"nameIdentifiers":[{"nameIdentifier":"499687","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"499688","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Excitation properties of the divacancy in 4H-SiC","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Excitation properties of the divacancy in 4H-SiC"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2019-01-18"},"publish_date":"2019-01-18","publish_status":"0","recid":"49474","relation_version_is_last":true,"title":["Excitation properties of the divacancy in 4H-SiC"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:19:32.443897+00:00"}