@article{oai:repo.qst.go.jp:00049474,
 author = {Magnusson, Bjorn and Tien, Son Nguyen and Csore, Andras and Gallstrom, Andreas and Ohshima, Takeshi and Gali, Adam and G., Ivanov Ivan and 大島 武},
 journal = {Physical Review B},
 month = {Nov},
 note = {We investigate the photoluminescence (PL) quenching for the divacancy defect in 4H-SiC. The quenching appears only when the PL is excited below certain photon energies. An accurate theoretical ab initio calculation for the charge-transfer levels of the divacancy shows very good agreement between the position of the (0/−) level with respect to the conduction band for each divacancy
configuration and the corresponding experimentally observed threshold, allowing us to associate the PL decay with conversion of the divacancy from neutral to negative charge state because of the capture of electrons photoionized from other defects (traps) by the excitation. Electron spin resonance measurements are conducted in the dark and under excitation similar to that used in the PL experiments and shed light on the possible origin of traps in the different samples.},
 title = {Excitation properties of the divacancy in 4H-SiC},
 volume = {98},
 year = {2018}
}