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Deep Level Defects in 4H-SiC Epitaxial Layers
https://repo.qst.go.jp/records/49333
https://repo.qst.go.jp/records/493339b53ec88-4579-4821-ba70-f83f05d766d5
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-07-18 | |||||
| タイトル | ||||||
| タイトル | Deep Level Defects in 4H-SiC Epitaxial Layers | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Capan, Ivana
× Capan, Ivana× Brodar, Tomislav× Ohshima, Takeshi× Sato, Shinichiro× Makino, Takahiro× Pastuovic, Zeljko× Siegele, Rainer× Snoj, Luka× Radulovic, Vladimir× Coutinho, Jose× J.B. Torres, Vitor× Demmouche, Kamel× Ohshima, Takeshi× Sato, Shinichiro× Makino, Takahiro |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first-principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively. | |||||
| 書誌情報 |
Materials Science Forum 巻 924, p. 225-228, 発行日 2018-06 |
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| 出版者 | ||||||
| 出版者 | Trans Tech Publications | |||||
| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 1662-9752 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.4028/www.scientific.net/MSF.924.225 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://www.scientific.net/MSF.924.225 | |||||
