{"created":"2023-05-15T14:38:13.803594+00:00","id":49333,"links":{},"metadata":{"_buckets":{"deposit":"a23df044-08a7-411d-b149-1cee40899ce3"},"_deposit":{"created_by":1,"id":"49333","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49333"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049333","sets":["1"]},"author_link":["801877","801882","801874","801880","801876","801884","801881","801873","801883","801886","801872","801878","801879","801885","801875"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-06","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"228","bibliographicPageStart":"225","bibliographicVolumeNumber":"924","bibliographic_titles":[{"bibliographic_title":"Materials Science Forum"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first-principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Trans Tech Publications"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/MSF.924.225","subitem_relation_type_select":"DOI"}}]},"item_8_relation_17":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"https://www.scientific.net/MSF.924.225","subitem_relation_type_select":"URI"}}]},"item_8_source_id_9":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"1662-9752","subitem_source_identifier_type":"ISSN"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Capan, Ivana"}],"nameIdentifiers":[{"nameIdentifier":"801872","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Brodar, Tomislav"}],"nameIdentifiers":[{"nameIdentifier":"801873","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"801874","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro"}],"nameIdentifiers":[{"nameIdentifier":"801875","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"801876","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Pastuovic, Zeljko"}],"nameIdentifiers":[{"nameIdentifier":"801877","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Siegele, Rainer"}],"nameIdentifiers":[{"nameIdentifier":"801878","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Snoj, Luka"}],"nameIdentifiers":[{"nameIdentifier":"801879","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Radulovic, Vladimir"}],"nameIdentifiers":[{"nameIdentifier":"801880","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Coutinho, Jose"}],"nameIdentifiers":[{"nameIdentifier":"801881","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"J.B. Torres, Vitor"}],"nameIdentifiers":[{"nameIdentifier":"801882","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Demmouche, Kamel"}],"nameIdentifiers":[{"nameIdentifier":"801883","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"801884","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Shinichiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"801885","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Makino, Takahiro","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"801886","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Deep Level Defects in 4H-SiC Epitaxial Layers","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Deep Level Defects in 4H-SiC Epitaxial Layers"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-07-18"},"publish_date":"2018-07-18","publish_status":"0","recid":"49333","relation_version_is_last":true,"title":["Deep Level Defects in 4H-SiC Epitaxial Layers"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:45:39.523017+00:00"}