@article{oai:repo.qst.go.jp:00049333,
 author = {Capan, Ivana and Brodar, Tomislav and Ohshima, Takeshi and Sato, Shinichiro and Makino, Takahiro and Pastuovic, Zeljko and Siegele, Rainer and Snoj, Luka and Radulovic, Vladimir and Coutinho, Jose and J.B. Torres, Vitor and Demmouche, Kamel and Ohshima, Takeshi and Sato, Shinichiro and Makino, Takahiro},
 journal = {Materials Science Forum},
 month = {Jun},
 note = {We present a study of electrically active radiation-induced defects formed in 4H-SiC epitaxial layers following irradiation with fast neutrons, as well as 600 keV H+ and 2 MeV He++ ion implantations. We also look at electron emission energies and mechanisms of the carbon vacancy in 4H-SiC by means of first-principles modelling. Combining the relative stability of carbon vacancies at different sites with the relative amplitude of the observed Laplace-DLTS peaks, we were able to connect Z1 and Z2 to emissions from double negatively charged carbon vacancies located at the h- and k-sites, respectively.},
 pages = {225--228},
 title = {Deep Level Defects in 4H-SiC Epitaxial Layers},
 volume = {924},
 year = {2018}
}