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Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission
https://repo.qst.go.jp/records/49128
https://repo.qst.go.jp/records/491280b44f874-861f-4b8c-83ad-16ce5ae11127
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-02 | |||||
| タイトル | ||||||
| タイトル | Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Fischer, M.
× Fischer, M.× Sperlich, A.× Kraus, H.× Ohshima, Takeshi× V., Astakhov G.× Dyakonov, V.× 大島 武 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Pump efficiency of silicon-vacancy-related spins in silicon carbide was studied. The spin population inversion factor of 75 with the saturation optical pump power of about 350 mW was realized at room temperature in the case of a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz. The pump efficiency drastically became high at low temperature because of an exceptionally long spinlattice relaxation time exceeding one minute. |
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| 書誌情報 |
Physical Review Applied 巻 9, p. 054006, 発行日 2018-05 |
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| 出版者 | ||||||
| 出版者 | American Physical Society | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1103/PhysRevApplied.9.054006 | |||||
