@article{oai:repo.qst.go.jp:00049128,
 author = {Fischer, M. and Sperlich, A. and Kraus, H. and Ohshima, Takeshi and V., Astakhov G. and Dyakonov, V. and 大島 武},
 journal = {Physical Review Applied},
 month = {May},
 note = {Pump efficiency of silicon-vacancy-related spins in silicon carbide was studied. The spin population inversion factor of 75 with the saturation optical pump power of about 350 mW was realized at room temperature in the case of a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz.
The pump efficiency drastically became high at low temperature because of an exceptionally long spinlattice relaxation time exceeding one minute.},
 title = {Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission},
 volume = {9},
 year = {2018}
}