{"created":"2023-05-15T14:38:04.807036+00:00","id":49128,"links":{},"metadata":{"_buckets":{"deposit":"18a7a3ce-427b-479d-b115-bcb659a3eb90"},"_deposit":{"created_by":1,"id":"49128","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49128"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049128","sets":["1"]},"author_link":["495636","495642","495641","495640","495638","495639","495637"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-05","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"054006","bibliographicVolumeNumber":"9","bibliographic_titles":[{"bibliographic_title":"Physical Review Applied"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Pump efficiency of silicon-vacancy-related spins in silicon carbide was studied. The spin population inversion factor of 75 with the saturation optical pump power of about 350 mW was realized at room temperature in the case of a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz.\nThe pump efficiency drastically became high at low temperature because of an exceptionally long spinlattice relaxation time exceeding one minute. ","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"American Physical Society"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1103/PhysRevApplied.9.054006","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Fischer, M."}],"nameIdentifiers":[{"nameIdentifier":"495636","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sperlich, A."}],"nameIdentifiers":[{"nameIdentifier":"495637","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kraus, H."}],"nameIdentifiers":[{"nameIdentifier":"495638","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"495639","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"V., Astakhov G."}],"nameIdentifiers":[{"nameIdentifier":"495640","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Dyakonov, V."}],"nameIdentifiers":[{"nameIdentifier":"495641","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"495642","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-08-02"},"publish_date":"2018-08-02","publish_status":"0","recid":"49128","relation_version_is_last":true,"title":["Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:21:02.448614+00:00"}