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Creation of Silicon Vacancy in Silicon Carbide by Proton Beam Writing toward Quantum Sensing Applications
https://repo.qst.go.jp/records/49122
https://repo.qst.go.jp/records/491229e4e4be6-94a8-4295-bd28-8588e83df9fe
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-08-02 | |||||
| タイトル | ||||||
| タイトル | Creation of Silicon Vacancy in Silicon Carbide by Proton Beam Writing toward Quantum Sensing Applications | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Ohshima, Takeshi
× Ohshima, Takeshi× Sato, Takahiro× Kraus, Hannes× V, Astakhov Georgy× Dyakonov, Vladimir× G, Baranov Pavel× 大島 武× 佐藤 隆博 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | Single photon source (SPS) is a key element for quantum spintronics and quantum photonics. Several color centers, silicon vacancy (Vsi), divacancy (VsiVc), carbon antisite carbon vacancy pair (CsiVc), in silicon carbide (SiC) act as SPSs. In those SPSs, spin (S = 3/2) in Vsi can be manipulated even at room temperature and the intensity of its photoluminescence (PL) changes depending on the spin states. Since PL from Vsi is in the near infrared region (around 900 nm), it is expected that Vsi is applied to quantum sensor especially for biological or medical applications. Therefore, quantum sensing based on Vsi in SiC is discussed. In addition, energetic particle irradiation, especially proton beam writing (PBW), is introduced as a method to create Vsi in SiC. | |||||
| 書誌情報 |
Journal of Physics D: Applied Physics 巻 51, p. 333002, 発行日 2018-07 |
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| 出版者 | ||||||
| 出版者 | IOP Publishing | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1088/1361-6463/aad0ec | |||||
