{"created":"2023-05-15T14:38:04.544314+00:00","id":49122,"links":{},"metadata":{"_buckets":{"deposit":"85df0faf-d314-40e8-8db0-45c6679ab57d"},"_deposit":{"created_by":1,"id":"49122","owners":[1],"pid":{"revision_id":0,"type":"depid","value":"49122"},"status":"published"},"_oai":{"id":"oai:repo.qst.go.jp:00049122","sets":["1"]},"author_link":["495580","495576","495575","495581","495582","495578","495579","495577"],"item_8_biblio_info_7":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2018-07","bibliographicIssueDateType":"Issued"},"bibliographicPageStart":"333002","bibliographicVolumeNumber":"51","bibliographic_titles":[{"bibliographic_title":"Journal of Physics D: Applied Physics"}]}]},"item_8_description_5":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Single photon source (SPS) is a key element for quantum spintronics and quantum photonics. Several color centers, silicon vacancy (Vsi), divacancy (VsiVc), carbon antisite carbon vacancy pair (CsiVc), in silicon carbide (SiC) act as SPSs. In those SPSs, spin (S = 3/2) in Vsi can be manipulated even at room temperature and the intensity of its photoluminescence (PL) changes depending on the spin states. Since PL from Vsi is in the near infrared region (around 900 nm), it is expected that Vsi is applied to quantum sensor especially for biological or medical applications. Therefore, quantum sensing based on Vsi in SiC is discussed. In addition, energetic particle irradiation, especially proton beam writing (PBW), is introduced as a method to create Vsi in SiC.","subitem_description_type":"Abstract"}]},"item_8_publisher_8":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"IOP Publishing"}]},"item_8_relation_14":{"attribute_name":"DOI","attribute_value_mlt":[{"subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1088/1361-6463/aad0ec","subitem_relation_type_select":"DOI"}}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"metadata only access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_14cb"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Ohshima, Takeshi"}],"nameIdentifiers":[{"nameIdentifier":"495575","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Sato, Takahiro"}],"nameIdentifiers":[{"nameIdentifier":"495576","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Kraus, Hannes"}],"nameIdentifiers":[{"nameIdentifier":"495577","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"V, Astakhov Georgy"}],"nameIdentifiers":[{"nameIdentifier":"495578","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"Dyakonov, Vladimir"}],"nameIdentifiers":[{"nameIdentifier":"495579","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"G, Baranov Pavel"}],"nameIdentifiers":[{"nameIdentifier":"495580","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"大島 武","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"495581","nameIdentifierScheme":"WEKO"}]},{"creatorNames":[{"creatorName":"佐藤 隆博","creatorNameLang":"en"}],"nameIdentifiers":[{"nameIdentifier":"495582","nameIdentifierScheme":"WEKO"}]}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Creation of Silicon Vacancy in Silicon Carbide by Proton Beam Writing toward Quantum Sensing Applications","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Creation of Silicon Vacancy in Silicon Carbide by Proton Beam Writing toward Quantum Sensing Applications"}]},"item_type_id":"8","owner":"1","path":["1"],"pubdate":{"attribute_name":"公開日","attribute_value":"2018-08-02"},"publish_date":"2018-08-02","publish_status":"0","recid":"49122","relation_version_is_last":true,"title":["Creation of Silicon Vacancy in Silicon Carbide by Proton Beam Writing toward Quantum Sensing Applications"],"weko_creator_id":"1","weko_shared_id":-1},"updated":"2023-05-15T23:21:05.771761+00:00"}