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Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam
https://repo.qst.go.jp/records/49043
https://repo.qst.go.jp/records/49043250deee3-9cee-4e35-8abc-93480e8b3600
| Item type | 学術雑誌論文 / Journal Article(1) | |||||
|---|---|---|---|---|---|---|
| 公開日 | 2018-05-18 | |||||
| タイトル | ||||||
| タイトル | Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam | |||||
| 言語 | ||||||
| 言語 | eng | |||||
| 資源タイプ | ||||||
| 資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||
| 資源タイプ | journal article | |||||
| アクセス権 | ||||||
| アクセス権 | metadata only access | |||||
| アクセス権URI | http://purl.org/coar/access_right/c_14cb | |||||
| 著者 |
Matsunaga, K.
× Matsunaga, K.× Hayashi, T.× Kurokawa, S.× Yokoo, H.× Hasegawa, Noboru× Nishikino, Masaharu× Kumada, T.× Otobe, Tomohito× Matsukawa, Y.× Takaya, Y.× 長谷川 登× 錦野 将元× 乙部 智仁 |
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| 抄録 | ||||||
| 内容記述タイプ | Abstract | |||||
| 内容記述 | The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process. | |||||
| 書誌情報 |
Proceedings of the 15th International Conference on X-Ray Lasers 巻 202, p. 321-326, 発行日 2018-03 |
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| ISSN | ||||||
| 収録物識別子タイプ | ISSN | |||||
| 収録物識別子 | 0930-8989 | |||||
| DOI | ||||||
| 識別子タイプ | DOI | |||||
| 関連識別子 | 10.1007/978-3-319-73025-7_48 | |||||
| 関連サイト | ||||||
| 識別子タイプ | URI | |||||
| 関連識別子 | https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48 | |||||
| 関連名称 | https://link.springer.com/chapter/10.1007/978-3-319-73025-7_48 | |||||
