@article{oai:repo.qst.go.jp:00049043,
 author = {Matsunaga, K. and Hayashi, T. and Kurokawa, S. and Yokoo, H. and Hasegawa, Noboru and Nishikino, Masaharu and Kumada, T. and Otobe, Tomohito and Matsukawa, Y. and Takaya, Y. and 長谷川 登 and 錦野 将元 and 乙部 智仁},
 journal = {Proceedings of the 15th International Conference on X-Ray Lasers},
 month = {Mar},
 note = {The authors investigate a low-fluence laser processing system with a femtosecond double-pulse beam and surface excitation of a power semiconductor wafer. The double-pulse laser processing method enables a semiconductor surface to be processed at a lower fluence and prevents penetration damage of the processed surface. The first pulse of the double beam is considered to have a role in exciting the semiconductor surface to increase the efficiency of light energy absorption. In this report, to verify the feasibility of low-fluence processing, we measure the damage threshold in the low-fluence ablation process.},
 pages = {321--326},
 title = {Investigation of Surface Excitation Effect for Ablation of 4H-SiC Substrate Using Double-Pulse Beam},
 volume = {202},
 year = {2018}
}